Conducted Emission Analysis

Category: 電磁場解析 / EMC | Integrated 2026-04-11
Conducted emission spectrum with LISN measurement model and CM/DM noise separation diagram
伝導エミッション解析 — LISNモデルとCM/DMノイズスペクトルの可視化

Theory and Physics

Overview — What is Conducted Emission?

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Is conducted emission the noise leaking from power lines?

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Yes. It refers to the noise current that leaks out externally through the power cables or signal cables of electronic equipment. It is generally measured in the frequency band of 150kHz to 30MHz and evaluated using a standardized impedance network called an LISN (Line Impedance Stabilization Network).

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Why is the range from 150kHz to 30MHz?

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Below 150kHz is too close to the fundamental operating frequency of the power supply, making separation difficult, and above 30MHz, cables start to behave as antennas, entering the realm of radiated emission (RE). In other words, conducted EMI and radiated EMI are separated by frequency.

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Specifically, what kind of products does this become a problem for?

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Almost all products equipped with switching power supplies. For example, in an EV's onboard charger (OBC), a DC-DC converter (48V→400V) operates at a switching frequency around 100kHz, so its harmonics directly overlap with the 150kHz band. The design goal is typically to pass CISPR 25 Class 5 with a 6dB margin.

Conducted Emission (CE) is an EMC test item that evaluates the noise current propagating from electronic equipment via power lines and signal lines. The main applicable standards are shown below.

StandardApplication FieldFrequency RangeTypical Limit Class
CISPR 25Automotive Electronics150kHz to 108MHzClass 1 to 5 (5 is the strictest)
CISPR 32IT & Multimedia150kHz to 30MHzClass A/B
CISPR 11Industrial, Scientific, Medical150kHz to 30MHzGroup 1/2, Class A/B
MIL-STD-461G CE102Military Equipment10kHz to 10MHz-

LISN (Line Impedance Stabilization Network) Model

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I often hear about LISN, but how does it work?

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An LISN (Line Impedance Stabilization Network) has two roles. One is to stabilize the power supply impedance seen from the DUT (Device Under Test) to 50Ω in the measurement frequency band. The other is to block noise from the external power supply to stabilize the measurement.

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Stabilizing to 50Ω, specifically how?

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The standard LISN circuit specified in CISPR 16-1-2 terminates the power line with a 50μH inductor and connects it to the 50Ω input of a spectrum analyzer via a coupling capacitor (0.1μF to 1μF). Above 150kHz, the impedance of the 50μH inductor becomes sufficiently high, and the impedance seen from the DUT side is dominated by 50Ω.

The terminal voltage $V_\text{LISN}$ measured by the LISN is expressed by the following equation:

$$ V_\text{LISN} = Z_\text{LISN}(f) \cdot I_\text{noise}(f) $$

Here, $Z_\text{LISN}(f)$ is the frequency-dependent LISN impedance. The impedance of a standard LISN (50Ω/50μH type) can be approximated by:

$$ Z_\text{LISN}(f) = \frac{R \cdot j\omega L}{R + j\omega L} = \frac{50 \cdot j\omega \cdot 50 \times 10^{-6}}{50 + j\omega \cdot 50 \times 10^{-6}} $$

Where $R = 50\,\Omega$, $L = 50\,\mu\text{H}$, $\omega = 2\pi f$. At 150kHz, $|Z_\text{LISN}| \approx 43\,\Omega$, and above 1MHz, it asymptotically approaches $|Z_\text{LISN}| \approx 50\,\Omega$.

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How do you model the LISN in simulation?

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The basic approach is to use a SPICE model as an L-R parallel circuit with a DC-blocking coupling capacitor (0.1μF) in series. However, for high-precision analysis, it is necessary to include parasitic components of the LISN (self-resonant frequency, connector contact resistance, ground impedance) in the model. The best practice is to obtain S-parameters from actual measurements and create a broadband model.

CM/DM Noise Separation

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What's the difference between common mode and differential mode?

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Let the noise current flowing on the positive side of the power line be $I_1$, and on the negative side be $I_2$. Then, the differential mode (DM) current and common mode (CM) current can be separated as follows:

$$ I_\text{DM} = \frac{I_1 - I_2}{2} $$
$$ I_\text{CM} = \frac{I_1 + I_2}{2} $$
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DM noise is primarily generated by the current ripple caused by the switching device's ON/OFF and flows in opposite directions on the power supply's outgoing and return paths. On the other hand, CM noise is the current that leaks to earth via the stray capacitance between the switching node and the chassis, flowing in the same direction on both the outgoing and return paths.

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Can you give a concrete example?

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For example, when a MOSFET switches in an automotive DC-DC converter, the drain voltage changes steeply (e.g., 0V→400V) (dv/dt = tens of V/ns). This dv/dt generates CM noise through the stray capacitance (tens of pF) between the MOSFET package and the heat sink. It can be estimated by $I_\text{CM} = C_\text{stray} \cdot \frac{dv}{dt}$. For 10pF and 20V/ns, that's an instantaneous leakage current of 200mA.

Equations to separate CM/DM components from the voltages $V_+$, $V_-$ measured on the positive and negative sides of the LISN:

$$ V_\text{DM} = \frac{V_+ - V_-}{2} $$
$$ V_\text{CM} = \frac{V_+ + V_-}{2} $$

Generally, DM noise tends to be dominant on the low-frequency side (~a few MHz), while CM noise tends to be dominant on the high-frequency side (a few MHz to 30MHz). Correctly understanding this frequency dependency is key in filter design.

Noise Source Modeling

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I'm curious about how to model noise sources in simulation.

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There are two main types of noise source models for switching power supplies: the voltage source model and the current source model. DM noise can be represented as an equivalent current source from the FFT of the trapezoidal switching current. The harmonic envelope of a trapezoidal wave is:

$$ |I_n| = \frac{2 I_\text{pk}}{\pi n} \cdot \left|\frac{\sin(n\pi D)}{1}\right| \cdot \left|\frac{\sin(n\pi f_\text{sw} t_r)}{n\pi f_\text{sw} t_r}\right| $$

Where $I_\text{pk}$ is the peak current, $D$ is the duty ratio, $f_\text{sw}$ is the switching frequency, $t_r$ is the rise time, and $n$ is the harmonic order.

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It's important to note that the trapezoidal wave envelope has two breakpoints (corner frequencies). At the first breakpoint $f_1 = 1/(\pi t_\text{on})$, the spectrum begins to attenuate at -20dB/dec, and at the second breakpoint $f_2 = 1/(\pi t_r)$, it changes to -40dB/dec. Faster rise times increase high-frequency components, so special care is needed, especially with SiC/GaN devices.

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What about CM noise sources?

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CM noise is determined by the dv/dt of the switching node and stray capacitance, so an equivalent voltage source model is used. It is modeled as a Thévenin equivalent circuit, with the switching node voltage $V_\text{sw}(t)$ as the voltage source and parasitic impedance in series.

$$ I_\text{CM} = C_\text{stray} \cdot \frac{dV_\text{sw}}{dt} $$

Filter Insertion Loss Theory

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How do you calculate filter insertion loss (IL)?

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Insertion loss is defined as the ratio of the LISN terminal voltage before and after inserting the filter:

$$ \text{IL}(f) = 20 \log_{10} \left| \frac{V_\text{LISN,without}(f)}{V_\text{LISN,with}(f)} \right| \quad [\text{dB}] $$
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The design goal is as follows. First, add a margin to the difference between the standard's limit value $L_\text{limit}(f)$ and the measured (or simulated) value $V_\text{meas}(f)$:

$$ \text{IL}_\text{required}(f) = V_\text{meas}(f) - L_\text{limit}(f) + \text{Margin} $$

Here, Margin is typically 6dB (considering production variation and aging). For example, if the CISPR 25 Class 5 limit is 18dBμV and the unfiltered simulation value is 52dBμV, the required IL is $52 - 18 + 6 = 40\,\text{dB}$.

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40dB is a huge attenuation. How do you achieve that?

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An LC filter with one stage (L-C) provides -40dB/dec attenuation. For frequencies above the cutoff frequency $f_c$:

$$ f_c = \frac{1}{2\pi\sqrt{LC}} $$
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For example, if 40dB attenuation is needed at 150kHz, setting $f_c$ to about 15kHz makes it achievable with a single-stage π-type LC filter. However, in reality, the filter's high-frequency characteristics degrade due to the inductor's self-resonant frequency (SRF) and the capacitor's ESL, so component selection becomes very important.

Coffee Break Yomoyama Talk

The Daily Life of an Engineer Chasing "Invisible Noise"

In the field of conducted emission countermeasures, the term "whack-a-mole" is often used. It refers to the phenomenon where suppressing noise in one frequency band with a filter causes new peaks to appear in another band. This is caused by the filter's self-resonance or impedance mismatch, where the countermeasure component itself creates a new noise path. Veteran EMC engineers unanimously say, "First, correctly separate CM/DM." Misdiagnosing the cause and trying to suppress CM noise with a DM filter is like treating a fracture for a cold.

Physical Meaning of CM/DM Separation
  • $I_\text{DM} = (I_1 - I_2)/2$: Differential mode current. The noise component flowing through the same path as the normal operating current of the power supply (outgoing path → load → return path). Mainly caused by input current ripple from switching. Can be bypassed with an X capacitor (line-to-line capacitor).
  • $I_\text{CM} = (I_1 + I_2)/2$: Common mode current. Flows in the same direction on both outgoing and return paths and returns to earth (chassis GND) via stray capacitance. Mainly caused by dv/dt of the switching node and parasitic capacitance. Suppressed by a common mode choke (CMC) and Y capacitors (line-to-GND capacitors).
  • $V_\text{LISN} = Z_\text{LISN} \cdot I_\text{noise}$: The product of the 50Ω impedance defined by the LISN and the noise current is the voltage measured by the spectrum analyzer. In dBμV notation, $V_\text{dB\mu V} = 20\log_{10}(V/1\mu\text{V})$.
Dimensional Analysis and Unit System
VariableSI UnitNotes / Conversion Memo
Noise Voltage $V_\text{LISN}$V → dBμV1μV = 0 dBμV. CISPR limits are expressed in dBμV.
LISN Impedance $Z$Ω50Ω/50μH type is standard. 5Ω/1μH type also exists (for DC power supplies).
Stray Capacitance $C_\text{stray}$F (pF)MOSFET-heat sink: 10–100pF. Transformer primary-secondary: 5–50pF.
Switching Frequency $f_\text{sw}$Hz (kHz)Automotive DC-DC: 50–200kHz. Server power supply: 200–500kHz.
Rise Time $t_r$s (ns)Si-MOSFET: 10–50ns. SiC: 5–15ns. GaN: 2–10ns.

Numerical Methods and Implementation

SPICE Circuit Modeling

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Where do you start with conducted emission simulation?

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The most basic approach is SPICE circuit simulation. Connect the three elements—the switching model of the power conversion circuit, the LISN equivalent circuit, and the EMI filter—run a time-domain analysis (Transient), perform an FFT on the LISN terminal voltage waveform, and output the spectrum.

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What are the precautions when performing FFT?

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There are three important points. (1) Window function: Since switching power supplies are periodic signals, always cut the data at integer multiples of the switching period. Using a non-periodic window causes spectral leakage. (2) Time resolution: To evaluate up to 30MHz, at least 60MHz sampling (≈16.7ns step) is required from the Nyquist theorem. Practically, 100MHz or higher is desirable. (3) Confirming steady state: Use data after the transient response has sufficiently converged. Including data immediately after startup will not yield the correct steady-state spectrum.

Parasitic Parameter Extraction

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Is SPICE alone accurate enough? I'm concerned about parasitic components.

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Good question. The accuracy of CE analysis is almost entirely determined by the accuracy of the parasitic parameters. These four are particularly important:

Parasitic ComponentImpactExtraction MethodTypical Value
PCB Trace InductanceResonance point of DM noise3D EM extraction (Q3D/FastHenry)5–20nH/cm
MOSFET-Heat Sink CapacitanceMain path for CM noiseFEM electrostatic field analysis or measurement10–100pF
Transformer Inter-winding CapacitanceCM coupling pathLCR meter measurement + FEM model5–50pF
Capacitor ESLDegradation of filter high-frequency characteristicsManufacturer SPICE model or measurement0.5–5nH
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Ignoring a capacitor's ESL (Equivalent Series Inductance) is particularly fatal. For example, if the ESL of a 0.1μF MLCC (multilayer ceramic capacitor) is 1nH, its self-resonant frequency is:

$$ f_\text{SRF} = \frac{1}{2\pi\sqrt{L_\text{ESL} \cdot C}} = \frac{1}{2\pi\sqrt{1 \times 10^{-9} \times 0.1 \times 10^{-6}}} \approx 16\,\text{MHz} $$
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Above the SRF, the capacitor behaves as an inductor rather than a capacitor. This means the filter capacitor becomes ineffective above 16MHz. This is the cause of bugs that remain invisible when using ideal capacitor models in SPICE.

Time Domain vs. Frequency Domain Usage

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Time domain analysis or frequency domain analysis, which should be used?

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Let's summarize the key points for choosing.

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