Hall Effect Sensor

Category: Electromagnetics – Sensors | Revised 2026-10-01
CAE visualization for hall effect sensor theory - technical simulation diagram
Hall Effect Sensor

Theory: a voltage from the Lorentz force

Overview

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I'm building a circuit to measure motor current with a Hall element. I don't know how to choose the element and core.

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A Hall element exploits the effect whereby, when field is applied to a current-carrying semiconductor plate, the Lorentz force pushes charge to one side and a transverse voltage appears. The voltage is proportional to field, so it senses field. To measure current, a gapped magnetic core around the conductor concentrates the current's field in the gap, where the element measures it. Element material sets sensitivity and temperature behaviour; gap size sets sensitivity and the current ceiling. First get a feel for each number.

Hall voltage

$$ V_H = \frac{I\,B}{n\,q\,t} \ \ (\text{constant current}), \qquad V_H \approx \mu_H\,\frac{W}{L}\,V\,B \ \ (\text{constant voltage}) $$

$n$ is carrier density, $q$ elementary charge, $t$ plate thickness, $\mu_H$ Hall mobility and $W/L$ width-to-length ratio. At constant current, low-density thin elements give more output; at constant voltage, high-mobility ones do.

Field in the core gap

$$ B_{gap} \approx \frac{\mu_0 N I}{g} \quad (\text{core reluctance neglected}) $$

If core permeability is high enough, magnetic-circuit reluctance is set almost entirely by the gap, and gap field is proportional to current. $N$ is turns (1 for a busbar passing through once) and $g$ gap length.

Coffee Break Trivia

An application that waited a century

The Hall effect was discovered in 1879 by the American graduate student Hall, passing current through a thin gold film in a magnetic field. The electron wasn't yet known, and in metals the effect was tiny and impractical. As semiconductor research advanced in the mid-20th century, low-carrier-density semiconductors were found to give large Hall voltages, and Hall elements were produced. Today they are everywhere: smartphone electronic compasses, motor rotor-position sensing and electric-vehicle current sensors.

Worked examples

Example 1: silicon element sensitivity

A silicon element with carrier density 10²² m⁻³ and 1 µm thickness has sensitivity 624 V/(A·T). At 1 mA and 10 mT, the Hall voltage is 6.24 mV.

Example 2: material comparison (constant 1 V, 10 mT)

MaterialMobilityHall voltageNotes
Silicon0.135 m²/Vs1.4 mVIntegrates with circuitry
GaAs0.85 m²/Vs8.5 mVGood temperature stability
InSb7.8 m²/Vs78 mVHigh sensitivity, strong temperature drift

Example 3: current-sensor gap

GapField per ampereField at 100 ACurrent at 0.4 T saturation
1 mm1.26 mT126 mT318 A
2 mm0.63 mT63 mT637 A
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Widening the gap raises the current range but lowers sensitivity. How do I decide?

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First, the core must not saturate at the maximum current; then choose a gap giving enough element output against noise and temperature drift. But this formula neglects core reluctance and fringing (field spreading from the gap edges), so the real gap field is smaller and varies with position. Small element misalignment changes sensitivity, so compute the gap-field distribution by magnetic analysis and check the effect of element position and assembly tolerance. For large currents, closed-loop sensors with a cancelling winding avoid core saturation.

Design workflow

  1. Set the field (or current) range, required resolution and temperature range.
  2. Choose element material and drive mode (constant current or voltage) from sensitivity and temperature behaviour.
  3. Size core shape and gap by balancing saturation against sensitivity.
  4. Use magnetic analysis to check gap-field distribution and crosstalk from neighbouring conductors.
  5. Design offset and temperature compensation and verify on prototypes.
Coffee Break Trivia

“The neighbouring phase leaks in”

In an inverter's three-phase current sensors, one sensor's reading picked up several percent of the neighbouring phase's current changes. A neighbouring busbar passed close to the core gap, and part of its field entered the gap. 3D magnetic analysis with current in only the neighbouring busbar reproduced the leakage ratio. Rotating the core 90° away from that busbar and adding a magnetic shield nearly eliminated it. Hall elements faithfully pick up fields other than the intended one.

Common mistakes

Mistakes and fixes

MistakeEffectFix
Ignoring fringingSensitivity overestimatedCompute distribution by analysis
Not checking saturation at maximumOutput clips at high currentRevise gap or core section
Ignoring temperature effectsDrift at high temperatureTemperature compensation
Ignoring neighbouring conductorsCrosstalkReview layout and shielding
Ignoring element misalignmentLarge unit-to-unit variationAnalyse with tolerances
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I'd like to try related calculations.

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Related fields

Coupled AnalysisStructural AnalysisThermal Analysis
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